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Conductance of Channel of MOSFET using Gate to Source Voltage Formula

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GoConductance in Linear Resistance of MOSFET Formula

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The conductance of channel is typically defined as the ratio of the current passing through the channel to the voltage across it. Check FAQs

G = μ s \cdot C ox \cdot \frac{W c}{L} \cdot (V gs - V th)

G - Conductance of Channel?μ_s - Mobility of Electrons at Surface of Channel?C_ox - Oxide Capacitance?W_c - Channel Width?L - Channel Length?V_gs - Gate-Source Voltage?V_th - Threshold Voltage?

Conductance of Channel of MOSFET using Gate to Source Voltage Example

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Here is how the Conductance of Channel of MOSFET using Gate to Source Voltage equation looks like with Values.

Here is how the Conductance of Channel of MOSFET using Gate to Source Voltage equation looks like with Units.

Here is how the Conductance of Channel of MOSFET using Gate to Source Voltage equation looks like.

6.0724 = 38 \cdot 940 \cdot \frac{10}{100} \cdot (4 - 2.3)

6.0724mS = 38m²/V*s \cdot 940μF \cdot \frac{10μm}{100μm} \cdot (4V - 2.3V)

6.0724 = 38 \cdot 940 \cdot \frac{10}{100} \cdot (4 - 2.3)

Tip: Use pencil () icon above to edit Input Values and Units.

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Conductance of Channel of MOSFET using Gate to Source Voltage Solution

Follow our step by step solution on how to calculate Conductance of Channel of MOSFET using Gate to Source Voltage?

FIRST Step Consider the formula

G = μ s \cdot C ox \cdot \frac{W c}{L} \cdot (V gs - V th)

Next Step Substitute values of Variables

∴

G = 38m²/V*s \cdot 940μF \cdot \frac{10μm}{100μm} \cdot (4V - 2.3V)

Next Step Convert Units

∴

G = 38m²/V*s \cdot 0.0009F \cdot \frac{1E-5m}{0.0001m} \cdot (4V - 2.3V)

Next Step Prepare to Evaluate

∴

G = 38 \cdot 0.0009 \cdot \frac{1E-5}{0.0001} \cdot (4 - 2.3)

Next Step Evaluate

∴

G = 0.0060724S

LAST Step Convert to Output's Unit

∴

G = 6.0724mS

Conductance of Channel of MOSFET using Gate to Source Voltage Formula Elements

Variables

Conductance of Channel

The conductance of channel is typically defined as the ratio of the current passing through the channel to the voltage across it.

Symbol: G

Measurement: Electric ConductanceUnit: mS

Note: Value can be positive or negative.

Mobility of Electrons at Surface of Channel

The mobility of electrons at surface of channel refers to the ability of electrons to move or travel through the surface of a semiconductor material, such as a silicon channel in a transistor.

Symbol: μ_s

Measurement: MobilityUnit: m²/V*s

Note: Value should be greater than 0.

Oxide Capacitance

Oxide capacitance is an important parameter that affects the performance of MOS devices, such as the speed and power consumption of integrated circuits.

Symbol: C_ox

Measurement: CapacitanceUnit: μF

Note: Value should be greater than 0.

Channel Width

Channel width refers to the range of frequencies used for transmitting data over a wireless communication channel. It is also known as bandwidth and is measured in hertz (Hz).

Symbol: W_c

Measurement: LengthUnit: μm

Note: Value should be greater than 0.

Channel Length

Channel length refers to the distance between the source and drain terminals in a field-effect transistor (FET).

Symbol: L

Measurement: LengthUnit: μm

Note: Value should be greater than 0.

Gate-Source Voltage

Gate-source voltage is a critical parameter that affects the operation of an FET, and it is often used to control the device's behavior.

Symbol: V_gs

Measurement: Electric PotentialUnit: V

Note: Value should be greater than 0.

Threshold Voltage

Threshold voltage, also known as the gate threshold voltage or simply Vth, is a critical parameter in the operation of field-effect transistors, which are fundamental components in modern electronics.

Symbol: V_th

Measurement: Electric PotentialUnit: V

Note: Value should be greater than 0.

Credits

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Created by Payal Priya

Birsa Institute of Technology (BIT), Sindri

Payal Priya has created this Formula and 600+ more formulas!

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Verified by Urvi Rathod

Vishwakarma Government Engineering College (VGEC), Ahmedabad

Urvi Rathod has verified this Formula and 1900+ more formulas!

Other Formulas to find Conductance of Channel

Go Conductance in Linear Resistance of MOSFET

G = \frac{1}{R ds}

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Go Maximum Voltage Gain given all Voltages

A vm = \frac{V dd - 0.3}{V t}

See More

How to Evaluate Conductance of Channel of MOSFET using Gate to Source Voltage?

Conductance of Channel of MOSFET using Gate to Source Voltage evaluator uses Conductance of Channel = Mobility of Electrons at Surface of Channel*Oxide Capacitance*Channel Width/Channel Length*(Gate-Source Voltage-Threshold Voltage) to evaluate the Conductance of Channel, The conductance of channel of MOSFET using Gate to Source Voltage is defined as the ratio of ionic current through the channel to the applied voltage, can be calculated once the current, the number of ions that traverse the channel per unit time when an external electric field is applied to the system. Conductance of Channel is denoted by G symbol.

How to evaluate Conductance of Channel of MOSFET using Gate to Source Voltage using this online evaluator? To use this online evaluator for Conductance of Channel of MOSFET using Gate to Source Voltage, enter Mobility of Electrons at Surface of Channel (μ_s), Oxide Capacitance (C_ox), Channel Width (W_c), Channel Length (L), Gate-Source Voltage (V_gs) & Threshold Voltage (V_th) and hit the calculate button.

FAQs on Conductance of Channel of MOSFET using Gate to Source Voltage

What is the formula to find Conductance of Channel of MOSFET using Gate to Source Voltage?

The formula of Conductance of Channel of MOSFET using Gate to Source Voltage is expressed as Conductance of Channel = Mobility of Electrons at Surface of Channel*Oxide Capacitance*Channel Width/Channel Length*(Gate-Source Voltage-Threshold Voltage). Here is an example- 6072.4 = 38*0.00094*1E-05/0.0001*(4-2.3).

How to calculate Conductance of Channel of MOSFET using Gate to Source Voltage?

With Mobility of Electrons at Surface of Channel (μ_s), Oxide Capacitance (C_ox), Channel Width (W_c), Channel Length (L), Gate-Source Voltage (V_gs) & Threshold Voltage (V_th) we can find Conductance of Channel of MOSFET using Gate to Source Voltage using the formula - Conductance of Channel = Mobility of Electrons at Surface of Channel*Oxide Capacitance*Channel Width/Channel Length*(Gate-Source Voltage-Threshold Voltage).

What are the other ways to Calculate Conductance of Channel?

Here are the different ways to Calculate Conductance of Channel-

Conductance of Channel=1/Linear Resistance

Can the Conductance of Channel of MOSFET using Gate to Source Voltage be negative?

Yes, the Conductance of Channel of MOSFET using Gate to Source Voltage, measured in Electric Conductance can be negative.

Which unit is used to measure Conductance of Channel of MOSFET using Gate to Source Voltage?

Conductance of Channel of MOSFET using Gate to Source Voltage is usually measured using the Millisiemens[mS] for Electric Conductance. Siemens[mS], Megasiemens[mS], Mho[mS] are the few other units in which Conductance of Channel of MOSFET using Gate to Source Voltage can be measured.

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