Collector Base Capacitance
Collector Base Capacitance is simply the capacitance of
the collector-base junction including both the flat bottom portion of the junction and the sidewalls.
Symbol: Ccb
Measurement: CapacitanceUnit: μF
Note: Value should be greater than 0.
Emitter Base Junction Area
Emitter Base Junction Area is a P-N junction formed between the heavily doped P-type material (emitter) and the lightly doped N-type material (base) of the transistor.
Symbol: A
Measurement: AreaUnit: cm²
Note: Value should be greater than 0.
Charge
Charge a characteristic of a unit of matter that expresses the extent to which it has more or fewer electrons than protons.
Symbol: q
Measurement: Electric ChargeUnit: mC
Note: Value should be greater than 0.
Permittivity
Permittivity is a physical property that describes how much resistance a material offers to the formation of an electric field within it.
Symbol: ε
Measurement: PermittivityUnit: F/m
Note: Value should be greater than 0.
Doping Density
Doping Density is a process in which certain impurity atoms, such as phosphorus or boron, are introduced into the semiconductor to alter its electrical properties.
Symbol: Nb
Measurement: Electron DensityUnit: electrons/m³
Note: Value should be greater than 0.
Built In Potential
The Built In Potential affects the size of the depletion region, which in turn influences the capacitance of the junction.
Symbol: ψo
Measurement: Electric PotentialUnit: V
Note: Value should be greater than 0.
Reverse Bias Junction
Reverse Bias Junction refers to the condition in a semiconductor device, where the voltage applied across the junction opposes the normal flow of current through the device.
Symbol: Vrb
Measurement: Electric CurrentUnit: A
Note: Value should be greater than 0.