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NMOS as Linear Resistance Formula

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Linear resistance acts as a variable resistor in the linear region and as a current source in the saturation region. Check FAQs

r DS = \frac{L}{μ n \cdot C ox \cdot W c \cdot (V gs - V T)}

r_DS - Linear Resistance?L - Length of the Channel?μ_n - Mobility of Electrons at Surface of Channel?C_ox - Oxide Capacitance?W_c - Width of Channel?V_gs - Gate Source Voltage?V_T - Threshold Voltage?

NMOS as Linear Resistance Example

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Here is how the NMOS as Linear Resistance equation looks like with Values.

Here is how the NMOS as Linear Resistance equation looks like with Units.

Here is how the NMOS as Linear Resistance equation looks like.

7.9607 = \frac{3}{2.2 \cdot 2.02 \cdot 10 \cdot (10.3 - 1.82)}

7.9607kΩ = \frac{3μm}{2.2m²/V*s \cdot 2.02μF \cdot 10μm \cdot (10.3V - 1.82V)}

7.9607 = \frac{3}{2.2 \cdot 2.02 \cdot 10 \cdot (10.3 - 1.82)}

Tip: Use pencil () icon above to edit Input Values and Units.

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NMOS as Linear Resistance Solution

Follow our step by step solution on how to calculate NMOS as Linear Resistance?

FIRST Step Consider the formula

r DS = \frac{L}{μ n \cdot C ox \cdot W c \cdot (V gs - V T)}

Next Step Substitute values of Variables

∴

r DS = \frac{3μm}{2.2m²/V*s \cdot 2.02μF \cdot 10μm \cdot (10.3V - 1.82V)}

Next Step Convert Units

∴

r DS = \frac{3E-6m}{2.2m²/V*s \cdot 2E-6F \cdot 1E-5m \cdot (10.3V - 1.82V)}

Next Step Prepare to Evaluate

∴

r DS = \frac{3E-6}{2.2 \cdot 2E-6 \cdot 1E-5 \cdot (10.3 - 1.82)}

Next Step Evaluate

∴

r DS = 7960.70173055041Ω

Next Step Convert to Output's Unit

∴

r DS = 7.96070173055041kΩ

LAST Step Rounding Answer

∴

r DS = 7.9607kΩ

NMOS as Linear Resistance Formula Elements

Variables

Linear Resistance

Linear resistance acts as a variable resistor in the linear region and as a current source in the saturation region.

Symbol: r_DS

Measurement: Electric ResistanceUnit: kΩ

Note: Value can be positive or negative.

Length of the Channel

Length of the channel can be defined as the distance between its start and end points, and can vary greatly depending on its purpose and location.

Symbol: L

Measurement: LengthUnit: μm

Note: Value can be positive or negative.

Mobility of Electrons at Surface of Channel

The mobility of electrons at surface of channel refers to the ability of electrons to move or conduct within a material's surface layer when subjected to an electric field.

Symbol: μ_n

Measurement: MobilityUnit: m²/V*s

Note: Value can be positive or negative.

Oxide Capacitance

Oxide capacitance is an important parameter that affects the performance of MOS devices, such as the speed and power consumption of integrated circuits.

Symbol: C_ox

Measurement: CapacitanceUnit: μF

Note: Value can be positive or negative.

Width of Channel

The width of channel refers to the amount of bandwidth available for transmitting data within a communication channel.

Symbol: W_c

Measurement: LengthUnit: μm

Note: Value can be positive or negative.

Gate Source Voltage

The Gate Source Voltage is the voltage that falls across the gate-source terminal of the transistor.

Symbol: V_gs

Measurement: Electric PotentialUnit: V

Note: Value can be positive or negative.

Threshold Voltage

Threshold voltage, also known as the gate threshold voltage or simply Vth, is a critical parameter in the operation of field-effect transistors, which are fundamental components in modern electronics.

Symbol: V_T

Measurement: Electric PotentialUnit: V

Note: Value should be greater than 0.

Credits

Creator Image

Created by Payal Priya

Birsa Institute of Technology (BIT), Sindri

Payal Priya has created this Formula and 600+ more formulas!

Verifier Image

Verified by Urvi Rathod

Vishwakarma Government Engineering College (VGEC), Ahmedabad

Urvi Rathod has verified this Formula and 1900+ more formulas!

Other formulas in N Channel Enhancement category

Go Electron Drift Velocity of Channel in NMOS Transistor

v d = μ n \cdot E L

Go Current Entering Drain Terminal of NMOS given Gate Source Voltage

I d = k' n \cdot \frac{W c}{L} \cdot ((V gs - V T) \cdot V ds - \frac{1}{2} \cdot {V ds}^{2})

See More

How to Evaluate NMOS as Linear Resistance?

NMOS as Linear Resistance evaluator uses Linear Resistance = Length of the Channel/(Mobility of Electrons at Surface of Channel*Oxide Capacitance*Width of Channel*(Gate Source Voltage-Threshold Voltage)) to evaluate the Linear Resistance, The NMOS as linear resistance acts as a variable resistor in the linear region and as a current source in the saturation region. Unlike a BJT, to use a MOSFET as a switch, you need to operate within the linear region. Linear Resistance is denoted by r_DS symbol.

How to evaluate NMOS as Linear Resistance using this online evaluator? To use this online evaluator for NMOS as Linear Resistance, enter Length of the Channel (L), Mobility of Electrons at Surface of Channel (μ_n), Oxide Capacitance (C_ox), Width of Channel (W_c), Gate Source Voltage (V_gs) & Threshold Voltage (V_T) and hit the calculate button.

FAQs on NMOS as Linear Resistance

What is the formula to find NMOS as Linear Resistance?

The formula of NMOS as Linear Resistance is expressed as Linear Resistance = Length of the Channel/(Mobility of Electrons at Surface of Channel*Oxide Capacitance*Width of Channel*(Gate Source Voltage-Threshold Voltage)). Here is an example- 0.007961 = 3E-06/(2.2*2.02E-06*1E-05*(10.3-1.82)).

How to calculate NMOS as Linear Resistance?

With Length of the Channel (L), Mobility of Electrons at Surface of Channel (μ_n), Oxide Capacitance (C_ox), Width of Channel (W_c), Gate Source Voltage (V_gs) & Threshold Voltage (V_T) we can find NMOS as Linear Resistance using the formula - Linear Resistance = Length of the Channel/(Mobility of Electrons at Surface of Channel*Oxide Capacitance*Width of Channel*(Gate Source Voltage-Threshold Voltage)).

Can the NMOS as Linear Resistance be negative?

Yes, the NMOS as Linear Resistance, measured in Electric Resistance can be negative.

Which unit is used to measure NMOS as Linear Resistance?

NMOS as Linear Resistance is usually measured using the Kilohm[kΩ] for Electric Resistance. Ohm[kΩ], Megohm[kΩ], Microhm[kΩ] are the few other units in which NMOS as Linear Resistance can be measured.

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