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Impurity Atoms Per Unit Area Formula

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Total Impurity defines the impurities which is mix at atom per unit area in a base or the amount of impurity added to an intrinsic semiconductor varies its level of conductivity. Check FAQs

Q b = D n \cdot (A \cdot (\frac{q \cdot {n i}^{2}}{I c}) \cdot \exp (\frac{V be}{V t}))

Q_b - Total Impurity?D_n - Effective Diffusion?A - Emitter Base Junction Area?q - Charge?n_i - Intrinsic Concentration?I_c - Collector Current?V_be - Voltage Base Emitter?V_t - Thermal Voltage?

Impurity Atoms Per Unit Area Example

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With units

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Here is how the Impurity Atoms Per Unit Area equation looks like with Values.

Here is how the Impurity Atoms Per Unit Area equation looks like with Units.

Here is how the Impurity Atoms Per Unit Area equation looks like.

3.6E+9 = 0.5 \cdot (1.75 \cdot (\frac{5 \cdot {1.32}^{2}}{4.92}) \cdot \exp (\frac{3.5}{4.1}))

3.6E+9cm² = 0.5 \cdot (1.75cm² \cdot (\frac{5mC \cdot {1.321/cm³}^{2}}{4.92A}) \cdot \exp (\frac{3.5V}{4.1V}))

3.6E+9 = 0.5 \cdot (1.75 \cdot (\frac{5 \cdot {1.32}^{2}}{4.92}) \cdot \exp (\frac{3.5}{4.1}))

Tip: Use pencil () icon above to edit Input Values and Units.

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Impurity Atoms Per Unit Area Solution

Follow our step by step solution on how to calculate Impurity Atoms Per Unit Area?

FIRST Step Consider the formula

Q b = D n \cdot (A \cdot (\frac{q \cdot {n i}^{2}}{I c}) \cdot \exp (\frac{V be}{V t}))

Next Step Substitute values of Variables

∴

Q b = 0.5 \cdot (1.75cm² \cdot (\frac{5mC \cdot {1.321/cm³}^{2}}{4.92A}) \cdot \exp (\frac{3.5V}{4.1V}))

Next Step Convert Units

∴

Q b = 0.5 \cdot (0.0002m² \cdot (\frac{0.005C \cdot {1.3E+61/m³}^{2}}{4.92A}) \cdot \exp (\frac{3.5V}{4.1V}))

Next Step Prepare to Evaluate

∴

Q b = 0.5 \cdot (0.0002 \cdot (\frac{0.005 \cdot {1.3E+6}^{2}}{4.92}) \cdot \exp (\frac{3.5}{4.1}))

Next Step Evaluate

∴

Q b = 363831.258671893m²

Next Step Convert to Output's Unit

∴

Q b = 3638312586.71893cm²

LAST Step Rounding Answer

∴

Q b = 3.6E+9cm²

Impurity Atoms Per Unit Area Formula Elements

Variables

Functions

Total Impurity

Total Impurity defines the impurities which is mix at atom per unit area in a base or the amount of impurity added to an intrinsic semiconductor varies its level of conductivity.

Symbol: Q_b

Measurement: AreaUnit: cm²

Note: Value should be greater than 0.

Effective Diffusion

The effective diffusion is a parameter related to the diffusion process of carriers and is influenced by material properties and the geometry of the semiconductor junction.

Symbol: D_n

Measurement: NAUnit: Unitless

Note: Value should be greater than 0.

Emitter Base Junction Area

Emitter Base Junction Area is a P-N junction formed between the heavily doped P-type material (emitter) and the lightly doped N-type material (base) of the transistor.

Symbol: A

Measurement: AreaUnit: cm²

Note: Value should be greater than 0.

Charge

Charge a characteristic of a unit of matter that expresses the extent to which it has more or fewer electrons than protons.

Symbol: q

Measurement: Electric ChargeUnit: mC

Note: Value should be greater than 0.

Intrinsic Concentration

Intrinsic Concentration is the number of electrons in the conduction band or the number of holes in the valence band in intrinsic material.

Symbol: n_i

Measurement: Carrier ConcentrationUnit: 1/cm³

Note: Value should be greater than 0.

Collector Current

Collector current is the current that flows through the collector terminal of the transistor and is the current that is being amplified by the transistor.

Symbol: I_c

Measurement: Electric CurrentUnit: A

Note: Value should be greater than 0.

Voltage Base Emitter

Voltage Base Emitter is the voltage between the base and the emitter when forward biased, with the collector disconnected.

Symbol: V_be

Measurement: Electric PotentialUnit: V

Note: Value should be greater than 0.

Thermal Voltage

Thermal Voltage is the voltages created by the junction of dissimilar metals when a temperature difference exists between these junctions.

Symbol: V_t

Measurement: Electric PotentialUnit: V

Note: Value should be greater than 0.

exp

n an exponential function, the value of the function changes by a constant factor for every unit change in the independent variable.

Syntax: exp(Number)

Credits

Creator Image

Created by Rahul Gupta

Chandigarh University (CU), Mohali, Punjab

Rahul Gupta has created this Formula and 25+ more formulas!

Verifier Image

Verified by Ritwik Tripathi

Vellore Institute of Technology (VIT Vellore), Vellore

Ritwik Tripathi has verified this Formula and 100+ more formulas!

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How to Evaluate Impurity Atoms Per Unit Area?

Impurity Atoms Per Unit Area evaluator uses Total Impurity = Effective Diffusion*(Emitter Base Junction Area*((Charge*Intrinsic Concentration^2)/Collector Current)*exp(Voltage Base Emitter/Thermal Voltage)) to evaluate the Total Impurity, The Impurity Atoms Per Unit Area formula is defined as the amount of impurity, or dopant, added to an intrinsic (pure) semiconductor varies its level of conductivity. Total Impurity is denoted by Q_b symbol.

How to evaluate Impurity Atoms Per Unit Area using this online evaluator? To use this online evaluator for Impurity Atoms Per Unit Area, enter Effective Diffusion (D_n), Emitter Base Junction Area (A), Charge (q), Intrinsic Concentration (n_i), Collector Current (I_c), Voltage Base Emitter (V_be) & Thermal Voltage (V_t) and hit the calculate button.

FAQs on Impurity Atoms Per Unit Area

What is the formula to find Impurity Atoms Per Unit Area?

The formula of Impurity Atoms Per Unit Area is expressed as Total Impurity = Effective Diffusion*(Emitter Base Junction Area*((Charge*Intrinsic Concentration^2)/Collector Current)*exp(Voltage Base Emitter/Thermal Voltage)). Here is an example- 3.6E+13 = 0.5*(0.000175*((0.005*1320000^2)/4.92)*exp(3.5/4.1)).

How to calculate Impurity Atoms Per Unit Area?

With Effective Diffusion (D_n), Emitter Base Junction Area (A), Charge (q), Intrinsic Concentration (n_i), Collector Current (I_c), Voltage Base Emitter (V_be) & Thermal Voltage (V_t) we can find Impurity Atoms Per Unit Area using the formula - Total Impurity = Effective Diffusion*(Emitter Base Junction Area*((Charge*Intrinsic Concentration^2)/Collector Current)*exp(Voltage Base Emitter/Thermal Voltage)). This formula also uses Exponential Growth (exp) function(s).

Can the Impurity Atoms Per Unit Area be negative?

No, the Impurity Atoms Per Unit Area, measured in Area cannot be negative.

Which unit is used to measure Impurity Atoms Per Unit Area?

Impurity Atoms Per Unit Area is usually measured using the Square Centimeter[cm²] for Area. Square Meter[cm²], Square Kilometer[cm²], Square Millimeter[cm²] are the few other units in which Impurity Atoms Per Unit Area can be measured.

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