Saturation Current Density
Saturation Current Density is the current flow per unit area of the pn junction when a few volts of reverse bias is applied to the junction.
Symbol: J0
Measurement: Surface Current DensityUnit: A/m²
Note: Value should be greater than 0.
Diffusion Coefficient of Hole
Diffusion Coefficient of Hole is a measure of the ease of the hole motion through the crystal lattice. It is related to the mobility of the carrier, hole in this case.
Symbol: Dh
Measurement: DiffusivityUnit: m²/s
Note: Value should be greater than 0.
Diffusion Length of Hole
Diffusion Length of Hole is the characteristic distance the holes travel before recombining during the diffusion process.
Symbol: Lh
Measurement: LengthUnit: mm
Note: Value should be greater than 0.
Hole Concentration in n-Region
Hole Concentration in n-Region is the number of holes per unit volume in the n type doped region of the p-n junction.
Symbol: pn
Measurement: Carrier ConcentrationUnit: 1/m³
Note: Value should be greater than 0.
Electron Diffusion Coefficient
Electron Diffusion Coefficient is a measure of the ease of electron motion through the crystal lattice. It is related to the mobility of the carrier, electron in this case.
Symbol: DE
Measurement: DiffusivityUnit: m²/s
Note: Value should be greater than 0.
Diffusion Length of Electron
Diffusion Length of Electron is the characteristic distance the electrons travel before recombining during the diffusion process.
Symbol: Le
Measurement: LengthUnit: mm
Note: Value should be greater than 0.
Electron Concentration in p-Region
Electron Concentration in p-Region is the number of electrons per unit volume in the p type doped region of the p-n junction.
Symbol: np
Measurement: Carrier ConcentrationUnit: 1/m³
Note: Value should be greater than 0.