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Drain Current in Triode Region of PMOS Transistor Formula

GoDrain Current in Triode Region of PMOS Transistor given Vsd Formula

GoOverall Drain Current of PMOS Transistor Formula

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Drain current is the electric current flowing from the drain to the source of a field-effect transistor (FET) or a metal-oxide-semiconductor field-effect transistor (MOSFET). Check FAQs

I d = k' p \cdot WL \cdot ((V GS - mod \underset{̲}{u} s (V T)) \cdot V DS - \frac{1}{2} \cdot {(V DS)}^{2})

I_d - Drain Current?k'_p - Process Transconductance Parameter in PMOS?WL - Aspect Ratio?V_GS - Voltage between Gate and Source?V_T - Threshold Voltage?V_DS - Voltage between Drain and Source?

Drain Current in Triode Region of PMOS Transistor Example

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Here is how the Drain Current in Triode Region of PMOS Transistor equation looks like with Values.

Here is how the Drain Current in Triode Region of PMOS Transistor equation looks like with Units.

Here is how the Drain Current in Triode Region of PMOS Transistor equation looks like.

28.8635 = 2.1 \cdot 6 \cdot ((2.86 - mod \underset{̲}{u} s (0.7)) \cdot 2.45 - \frac{1}{2} \cdot {(2.45)}^{2})

28.8635mA = 2.1mS \cdot 6 \cdot ((2.86V - mod \underset{̲}{u} s (0.7V)) \cdot 2.45V - \frac{1}{2} \cdot {(2.45V)}^{2})

28.8635 = 2.1 \cdot 6 \cdot ((2.86 - mod \underset{̲}{u} s (0.7)) \cdot 2.45 - \frac{1}{2} \cdot {(2.45)}^{2})

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Home » Engineering » Electronics » Analog Electronics » Drain Current in Triode Region of PMOS Transistor

Drain Current in Triode Region of PMOS Transistor Solution

Follow our step by step solution on how to calculate Drain Current in Triode Region of PMOS Transistor?

FIRST Step Consider the formula

I d = k' p \cdot WL \cdot ((V GS - mod \underset{̲}{u} s (V T)) \cdot V DS - \frac{1}{2} \cdot {(V DS)}^{2})

Next Step Substitute values of Variables

∴

I d = 2.1mS \cdot 6 \cdot ((2.86V - mod \underset{̲}{u} s (0.7V)) \cdot 2.45V - \frac{1}{2} \cdot {(2.45V)}^{2})

Next Step Convert Units

∴

I d = 0.0021S \cdot 6 \cdot ((2.86V - mod \underset{̲}{u} s (0.7V)) \cdot 2.45V - \frac{1}{2} \cdot {(2.45V)}^{2})

Next Step Prepare to Evaluate

∴

I d = 0.0021 \cdot 6 \cdot ((2.86 - mod \underset{̲}{u} s (0.7)) \cdot 2.45 - \frac{1}{2} \cdot {(2.45)}^{2})

Next Step Evaluate

∴

I d = 0.02886345A

Next Step Convert to Output's Unit

∴

I d = 28.86345mA

LAST Step Rounding Answer

∴

I d = 28.8635mA

Drain Current in Triode Region of PMOS Transistor Formula Elements

Variables

Functions

Drain Current

Drain current is the electric current flowing from the drain to the source of a field-effect transistor (FET) or a metal-oxide-semiconductor field-effect transistor (MOSFET).

Symbol: I_d

Measurement: Electric CurrentUnit: mA

Note: Value should be greater than 0.

Process Transconductance Parameter in PMOS

The Process Transconductance Parameter in PMOS (PTM) is a parameter used in semiconductor device modeling to characterize the performance of a transistor.

Symbol: k'_p

Measurement: Electric ConductanceUnit: mS

Note: Value can be positive or negative.

Aspect Ratio

Aspect ratio is defined as the ratio of the width of the transistor's channel to its length. It is the ratio of the width of the gate to the distance btw the source & drain regions of the transistor.

Symbol: WL

Measurement: NAUnit: Unitless

Note: Value should be greater than 0.

Voltage between Gate and Source

The voltage between gate and source of a field-effect transistor (FET) is known as the gate-source voltage (VGS). It is an important parameter that affects the operation of the FET.

Symbol: V_GS

Measurement: Electric PotentialUnit: V

Note: Value can be positive or negative.

Threshold Voltage

Threshold voltage, also known as the gate threshold voltage or simply Vth, is a critical parameter in the operation of field-effect transistors, which are fundamental components in modern electronics.

Symbol: V_T

Measurement: Electric PotentialUnit: V

Note: Value should be greater than 0.

Voltage between Drain and Source

The voltage between drain and source is a key parameter in the operation of a field-effect transistor (FET) and is often referred to as the "drain-source voltage" or VDS.

Symbol: V_DS

Measurement: Electric PotentialUnit: V

Note: Value can be positive or negative.

modulus

Modulus of a number is the remainder when that number is divided by another number.

Syntax: modulus

Credits

Created by Payal Priya

Birsa Institute of Technology (BIT), Sindri

Payal Priya has created this Formula and 600+ more formulas!

Verified by Urvi Rathod

Vishwakarma Government Engineering College (VGEC), Ahmedabad

Urvi Rathod has verified this Formula and 1900+ more formulas!

Other Formulas to find Drain Current

Go Drain Current in Triode Region of PMOS Transistor given Vsd

I d = k' p \cdot WL \cdot (mod \underset{̲}{u} s (V ov) - \frac{1}{2} \cdot V DS) \cdot V DS

Go Overall Drain Current of PMOS Transistor

I d = \frac{1}{2} \cdot k' p \cdot WL \cdot {(V GS - mod \underset{̲}{u} s (V T))}^{2} \cdot (1 + \frac{V DS}{mod} \underset{̲}{u} s (V a))

Go Current in Inversion Channel of PMOS

I d = (W \cdot Q p \cdot V y)

Go Drain Current from Source to Drain

I d = (W \cdot Q p \cdot μ p \cdot E y)

Other formulas in P Channel Enhancement category

Go Drain Current in Saturation Region of PMOS Transistor

I ds = \frac{1}{2} \cdot k' p \cdot WL \cdot {(V GS - mod \underset{̲}{u} s (V T))}^{2}

Go Drain Current in Saturation Region of PMOS Transistor given Vov

I ds = \frac{1}{2} \cdot k' p \cdot WL \cdot {(V ov)}^{2}

Go Process Transconductance Parameter of PMOS

k' p = μ p \cdot C ox

Go Current in Inversion Channel of PMOS given Mobility

V y = μ p \cdot E y

How to Evaluate Drain Current in Triode Region of PMOS Transistor?

Drain Current in Triode Region of PMOS Transistor evaluator uses Drain Current = Process Transconductance Parameter in PMOS*Aspect Ratio*((Voltage between Gate and Source-modulus(Threshold Voltage))*Voltage between Drain and Source-1/2*(Voltage between Drain and Source)^2) to evaluate the Drain Current, The Drain current in triode region of PMOS transistor where the source is the small voltage and the drain is the biggest voltage(they are interchangeable). In PMOS transistor holes are the charge carriers and current flows because of the holes. Drain Current is denoted by I_d symbol.

How to evaluate Drain Current in Triode Region of PMOS Transistor using this online evaluator? To use this online evaluator for Drain Current in Triode Region of PMOS Transistor, enter Process Transconductance Parameter in PMOS (k'_p), Aspect Ratio (WL), Voltage between Gate and Source (V_GS), Threshold Voltage (V_T) & Voltage between Drain and Source (V_DS) and hit the calculate button.

FAQs on Drain Current in Triode Region of PMOS Transistor

What is the formula to find Drain Current in Triode Region of PMOS Transistor?

The formula of Drain Current in Triode Region of PMOS Transistor is expressed as Drain Current = Process Transconductance Parameter in PMOS*Aspect Ratio*((Voltage between Gate and Source-modulus(Threshold Voltage))*Voltage between Drain and Source-1/2*(Voltage between Drain and Source)^2). Here is an example- 28863.45 = 0.0021*6*((2.86-modulus(0.7))*2.45-1/2*(2.45)^2).

How to calculate Drain Current in Triode Region of PMOS Transistor?

With Process Transconductance Parameter in PMOS (k'_p), Aspect Ratio (WL), Voltage between Gate and Source (V_GS), Threshold Voltage (V_T) & Voltage between Drain and Source (V_DS) we can find Drain Current in Triode Region of PMOS Transistor using the formula - Drain Current = Process Transconductance Parameter in PMOS*Aspect Ratio*((Voltage between Gate and Source-modulus(Threshold Voltage))*Voltage between Drain and Source-1/2*(Voltage between Drain and Source)^2). This formula also uses Modulus (modulus) function(s).

What are the other ways to Calculate Drain Current?

Here are the different ways to Calculate Drain Current-

Drain Current=Process Transconductance Parameter in PMOS*Aspect Ratio*(modulus(Effective Voltage)-1/2*Voltage between Drain and Source)*Voltage between Drain and Source
Drain Current=1/2*Process Transconductance Parameter in PMOS*Aspect Ratio*(Voltage between Gate and Source-modulus(Threshold Voltage))^2*(1+Voltage between Drain and Source/modulus(Early Voltage))
Drain Current=(Width of Junction*Inversion Layer Charge*Drift Velocity of Inversion)

Can the Drain Current in Triode Region of PMOS Transistor be negative?

No, the Drain Current in Triode Region of PMOS Transistor, measured in Electric Current cannot be negative.

Which unit is used to measure Drain Current in Triode Region of PMOS Transistor?

Drain Current in Triode Region of PMOS Transistor is usually measured using the Milliampere[mA] for Electric Current. Ampere[mA], Microampere[mA], Centiampere[mA] are the few other units in which Drain Current in Triode Region of PMOS Transistor can be measured.

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Drain Current in Triode Region of PMOS Transistor Formula

​GoDrain Current in Triode Region of PMOS Transistor given Vsd Formula

​GoOverall Drain Current of PMOS Transistor Formula

Drain Current in Triode Region of PMOS Transistor Example

Drain Current in Triode Region of PMOS Transistor Solution

Drain Current in Triode Region of PMOS Transistor Formula Elements

Credits

Other Formulas to find Drain Current

Other formulas in P Channel Enhancement category

How to Evaluate Drain Current in Triode Region of PMOS Transistor?

FAQs on Drain Current in Triode Region of PMOS Transistor

Variable Name

GoDrain Current in Triode Region of PMOS Transistor given Vsd Formula

GoOverall Drain Current of PMOS Transistor Formula